High Voltage Lateral Bidirectional Super Junction IGBT with Fast Turn-off Speed

A novel lateral bidirectional super junction IGBT (LBSJ-IGBT) is proposed for the first time, which features a folded SJ structure with symmetrical N-buffer layer in the drift region. The relationships of breakdown voltage (BV), on-state voltage drop (V
_on
) as well as turn-off characteristics with device parameters are analyzed and simulated. The results show that the LBSJ-IGBT with BV of 668V, V
_on
of 1.40V @J
_on
=100A/cm
²
, turn-off loss (E
_off
) of 3.62mJ/cm
²
and fall time (t
_f
) of 14ns in both directions is obtained only with the cell pitch of 24μm. To the best of our knowledge, this is the first result to demonstrate a >600V high speed lateral bidirectional IGBT device.