Temperature Dependence of Diode and ggNMOS ESD Protection Structures in 28nm CMOS

This paper reports an experimental study of the temperature dependence of diode, diode-string and grounded-gate NMOS (ggNMOS) electrostatic discharge (ESD) protection structures fabricated in a foundry 28nm CMOS technology. The fabricated diode and ggNMOS ESD structures were characterized using transmission line pulse (TLP) testing over a temperature range from −40 °C to +110°C. The observed temperature variation provides a guideline for practical ESD protection circuit designs.