High-Voltage SOI Deep Trench LDMOS with Quasi Vertical Super Junction Structure

A novel high-voltage silicon-on-insulator (SOI) deep-trench lateral double diffused MOSFET with quasi vertical super junction structure (VSJDT-LDMOS) is proposed. The quasi VSJ structure introduced in the proposed device not only increases the doping concentration of the N
^-
drift region but also improves the blocking capability. Simulation results show that compared to those of the conventional SOI DT-LDMOS with similar device parameters, the specific on-resistance (R
_on,sp
) decreases by 41%, the breakdown voltage (BV) increases by 16% and thus the power figure of merit (FOM) increases by 128% for the proposed VSJDT-LDMOS.