Investigation on Impact of Fin Width on Single-Event-Transient in Bulk and SOI FinFETs

In this paper the impact of fin width on Single-Event-Transient (SET) of 14 nm bulk FinFETs is investigated and compared with SOI FinFETs by 3D TCAD simulation. Simulation results show that for bulk FinFETs, the collected charge and SET pulse width increase with fin width. For SOI FinFETs, the collected charge increases with fin width while SET pulse width gradually saturates. Compared with SOI FinFETs, both the collected charge and pulse width of bulk FinFETs are larger, and this difference enhances with the increase of fin width, which implies that fin width has much stronger impact on collected charge and SET pulse width in bulk FinFETs. Besides, the charge collected by drift diffusion in bulk FinFETs is two orders of magnitude larger than SOI FinFETs. The results imply that the impact of fin width on SET of FinFETs should be taken into consideration for radiation hardened design.