Research on IGBT Module Failure Caused by Thermal Stress Damage

In this paper, according to the analysis of insulated-gated bipolar transistor (IGBT) failure module, the potential reliability defects of IGBT module are evaluated by the finite element method (FEM). The simulation model is based on a commercial device. Results show that, thermoelectric stress may cause the deformation of IGBT module, and then form the solder delamination or voids; solder defects can greatly increase the junction temperature, which makes the larger deformation; the higher duty cycle will make IGBT module deformation increase, which is easier to form voids or cracks. All these will form a vicious circle, and then bring higher failure risk.