A New Type of Gated-PN TFET to Overcome the Ambipolar and Trap-Assisted Tunneling Effects

We propose a Gated-PN iTFET that places the gate over the source to increase the line-tunneling area and ON current. The device avoids the ambipolar effect, reduces trap-assisted tunneling, and improves subthreshold swing (SS). Across a very wide range of I
_d
values, the SS exceeds SS
_min
= 10.5 mV/dec, and averages SS
_avg
= 31.8 mV/dec. At V
_d
= 0.1 V, the device achieves a 1.46 × 10
^-7
A/μm ON current and a 3.57 × 10
⁷
ON/OFF current ratio. When trap-assisted tunneling is considered, the device still averages a SS of 51.8 mV/dec and an I
_on
/I
_off
ratio of 1.35 × 10
⁵
.