Modeling and Testing for Emitter Turn-Off Thyristor Devices

The Emitter Turn-Off (ETO) thyristor, a novel hybrid power semiconductor device, is a potential substitute for IGCT (Integrated Gate Commutated Thyristor) in high power applications. A sub-circuit functional model for the ETO device is presented in this paper, which simulates static and dynamic characteristics in PSIM software with low computational costs and acceptable accuracy. The model is verified by comparing simulation with experiment of a 4500V/4000A ETO device. Further experiments are presented, which show the difference in dynamic characteristics between the ETO and the IGCT.