High-Power Flip-Chip Bonded Modified Uni-Traveling Carrier Photodiodes with −2.6 dBm RF Output Power at 160 GHz

We report back-illuminated InGaAsP/InP charge-compensated modified uni-travelling carrier photodiodes with 0.2 A/W responsivity. RF output power performance of PDs ranging from 4 to 11-µm diameters is measured out to 165 GHz, achieving −2.6 dBm at 160 GHz (9-µm) and 3-dB bandwidth reaching 120 GHz (4-µm).