Non-Linear DC Offset of LDO Due to RF Noise

This paper presents the mechanism of RF noise propagation for a low drop out (LDO). Two drop points of output voltage in a range from 100 MHz to 1 GHz were confirmed by injecting RF noise into the output pin. This characteristic was reproduced in a simulation, and we clarify that inductance of the wire and parasitic elements of the pass transistor and device non-linearity greatly contribute to the output drop.