Effect of Light Irradiation on Carrier Mobility of n- and p-type Si substrates for Solar Cell Application

Hall mobility measurements of n- and p-type Si substrate under the concentrated sunlight irradiation were carried out to discuss the effect of large amount of carrier generation. The Hall mobility decreased linearly with increasing the sunlight concentration. It was also found that these decrease could prevent by using a sample with high doping concentration. From the comparison with the calculation, we concluded that the reduction of Hall mobility was due to increase of the photo-generated carriers (both hole and electron). Calculation of Hall mobility as a function of impurity doping concentration demonstrated that a suitable doping concentration for solar cell use was considered to be 10
¹⁶
cm
^-3
in both n- and p-type Si substrate from viewpoint of Hall mobility under 16-suns concentrated irradiation.