Cesium lead halide perovskite quantum dot deposition on GaAs substrates by dip coating

Dip coating is a highly efficient solution deposition technique suitable for chemically-synthesized perovskite quantum dots (PQDs). In dip coating, withdrawal speed is a key factor that determines thickness of the films and may affect their quality. In this work, the optimum withdrawal speed that would result to optically smooth cesium lead halide (CsPbX
₃
) PQD films on GaAs substrates was investigated through atomic force microscopy and optical characterization. Results revealed that the optimum withdrawal speed for producing high quality PQD film on GaAs is 10 mm/s. This work may contribute to the use of dip coating for low-cost, large-scale PQD deposition.