Towards Full-area Passivating Contacts for Silicon Surfaces based on Al2O3-TiOx Double Layers

In order to remove the local openings for contacting PERC Solar cells, one has to introduce passivating contacts. The Al
₂
O
₃
-TiO
_x
double layer stack is an attractive candidate for this purpose. This study will guide a way to enhance the conductivity of those contacts by doping TiO
_x
with a. Additionally, it is shown, that major parts of the stacks are deposited by sputtering. This demonstrates a higher feasibility for industrial applications than atomic layer deposition as reported earlier [1], [2].