Epitaxial lift-off of high quality pixelated thin-film GaSb solar cells

We fabricated and characterized disorder-free GaSb photovoltaic devices on Si. The fabrication process relies on epitaxial lift-off of pixelated GaSb membranes from GaSb substrates and their transfer onto Si. We demonstrated that our approach maintains the structural integrity and optoelectronic functionality of the GaSb absorbers after the epitaxial transfer. The performance parameters of the pixelated solar cells are V
oc
~ 0.1V, J
sc
~ 17 mA/cm
²
, FF ~ 29% and h~ 1.2%, which compare favorably to the characteristics of a 5x5 mm
²
, GaSb solar cells on a GaSb substrate.