A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors

We report on comparison studies between a novel transistor like device and two dimensional Fin Field-Effect transistor towards their applications in a terahertz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AIGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.