Optimization of Terahertz Emission Spectra of Electrically Pumped 2DEG Plasmonic AlGaN/GaN Heterostructures

In this work the radiative processes which deteriorate the performance of electrically pumped 2DEG plasmonic AIGaN/ GaN heterostructures are identified and optimized in the THz frequency range. The emission spectroscopy of AIGaN/GaN heterostructures grown on different substrates was investigated in the temperature range 20-300 K. A thermal radiation of the conductive channel and impurity electroluminescence were found largely contributing to the emission spectrum. The lower intensity of thermal radiation and electroluminescence signals are observed for the SiC-based sample providing an optimal solution for plasmonic THz sources by using AIGaN/GaN heterostructures.