10 MΩ Quantum Hall Array Device

We have developed 10 kΩ and 1 MΩ quantum Hall array devices so far on GaAs/AlGaAs substrates. To realize higher quantized resistance, we designed \pmb10 MΩ array device. The 10 MΩ quantum Hall array device consists of simply serially connected 775 Hall bars, and its nominal value is 10 MΩ×(1+246.27 μΩ/Ω). The channel width is 35 μm, and the expected collapse current is over 20 μA for each Hall bar. The Hall bars are connected with triple-connection technique to avoid the influence of contact resistance and wiring resistance on the quantized resistance value.