High Performance Double-Gate Graphene Radio-Frequency Transistors

Despite the demonstrated high current gain cutoff frequency (f
_T
), most graphene transistors show significantly lower maximum oscillation frequency (f
_max
), which is a crucial figure of merit that determines the transistors' power amplification ability. This work presents a new graphene device structure with double-gate synchronously control the graphene channel. The structure possesses several advantages over conventional top gate structures, including low gate resistance and high on/off ratio. f
_max
~ 50% higher than f
_T
is achieved from devices with different gate length.