Switched Impedance Enhanced-Boost Quasi-Z-Source Inverter

Enhanced-boost quasi-Z-source inverter (EB-qZSI) is proposed in this paper. Similar to the enhanced-boost ZSI and continuous input current enhanced-boost qZSI with two switched-impedance networks, this proposed inverter topology possess very high voltage boost at low shoot-through duty ratio and high modulation index to provide better quality output waveform and reduce the semiconductor stress. In addition to this, the proposed topology provides less voltage across the capacitor. Accordingly, lower rating capacitors can be used to reduce the cost, size, and weight of the system. Moreover, akin to continuous input current enhanced-boost qZSI, this proposed topology is able to solve the problem of starting inrush current, shares common ground with source, and provides continuous input current. This paper presents the operating principles and boost factor derivation of EB-qZSI and compares with EB-ZSI, EB-qZSI. Finally, the validation of theoretical analysis of the proposed inverter topology is verified in MATLAB/Simulink.