Investigation of AlGaN/GaN HEMT Electrical Characteristics with Recessed Insulator and Barrier at Both Source and Drain Sides

In this work, we investigate electrical characteristics of a novel gallium-nitride (GaN) based high electron mobility transistor (HEMT) that its insulator layer is recessed into the barrier and its barrier layer is recessed to the buffer layer at both source and drain sides. The recessed region of the insulator layer has the same length and thickness compared to those of the recessed region of the barrier layer. We investigate main device electrical parameters for instance drain current, threshold voltage, maximum output power density, DC trans-conductance, gate capacitance and cut off frequency (f
T
) by means of two dimensional ATLAS software. According to the Simulation results, insulator and barrier recess in the simulated structure improves drain current, maximum DC trans-conductance (gm), cut off frequency and maximum output power density compared to the conventional transistor. The investigated device has less gate capacitance than that in the conventional one. Also, the proposed structure has a negative shift in the threshold voltage.