Novel 3.3kV Si-SiC Hybrid Power Module

In this paper, one type of novel standardized 140mm×100mm footprint 3.3 kV Si-SiC hybrid power module has been designed and investigated. The power module is characterized by packaging of silicon based insulated-gate bipolar transistors (IGBTs) and silicon carbide (SiC) based Schottky barrier diodes (SBDs). To reduce the thermal coupling and enhance the reliability, each IGBT chip is anti-paralleled with two SBDs. Due to the adoption of new packaging structure, the multi-physics study is conducted for reliability-related analysis and optimization. We present the details about electromagnetic (EM) simulation and thermal network extraction at the design stage together with power module characteristics.