Property Characterization of Tantalum Nitride Film Deposited with Different N2 Flow by X-Ray Diffraction and X-Ray Reflectivity

In this study, Tantalum Nitride (TaN) film deposited with different N2 gas flow is experimented to characterize the gas flow's impact on the property of the film. X-Ray Reflectivity (XRR) measurement is performed to check film thickness and density differences. X-Ray diffraction (XRD) is used to both observe the changes in crystal orientation of TaN crystallites and to quantify grain size. Clear trends are observed for film thickness, density, crystal orientation and grain size as N2 gas flow increases from 3% to 42%.