High Field-Effect Mobility Amorphous Indium-Tin-Zinc-Oxide Thin-Film Transistors Using Negatively Charged Aluminium-Oxynitride Gate Dielectrics

We report the effects of negatively charged aluminium-oxynitride (AlON) gate dielectrics on the electrical properties of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). The a-ITZO TFT using the AlON gate dielectric has high field-effect mobility (μ
_FE
) of 116.9 cm
²
N.s, high on/off current ratio of ~10
⁸
and low sub-threshold swing of 0.11. Our high a-ITZO TFTs with μFE of 116.9 cm
²
/V
^.
s, obtained through control of the fixed charges with nitrogen annealing was suitable for application of next-generation displays including high-frame-rate and ultra-high resolution displays.