Solution Processed Steep Subthreshold OFETs for Low-power and High Sensitivity Bio-chemical Sensing

Low voltage field effect transistors (OFETs) are achieved by reducing the sub-gap density of states (DOS) at the channel instead of enlarging the gate dielectric capacitance. Further work realizes both large gate dielectric capacitance via low-k/high-k bilayer gate dielectric and significantly reduced sub-gate DOS at the channel in one device structure for steep subthreshold swing OFETs with all solution/printing processes. The use of such steep subthreshold swing OFETs for high sensitivity, low power ion sensing is presented.