Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements

In this paper, we discuss the comparison of two GaN HEMT technology processes by means of large-signal low-frequency (LF) measurements. LF load line analysis clarified the increase of output power and drain efficiency resulting from significant improvement of both knee voltage and maximum drain current by a modified technology process. The cross-check on this advantage was carried out by means of commonly adopted high-frequency load-pull measurement setups.