D-Band 360° Phase Shifter with Uniform Insertion Loss

This paper presents a D-Band phase shifter for 120 GHz phased array transceivers, implemented in 120 nm SiGe BiCMOS process (f
_T
/f
_max
=260/340 GHz). The proposed phase shifter employs two stages of reflection-type topology for 0-1800 operation, preceded by a Balun-based phase inverter to obtain a full 3600 phase shift with 11.25
⁰
resolution. The phase shifter exhibits uniform insertion-loss characteristic with less than 1 dB insertion loss variation over all phase states. The measured IL at 122 GHz is 5.8±0.3 dB. Measured RMS gain and phase error at 122-123 GHz are <;0.2 dB and <;3
⁰
, respectively. The IC occupies area of 750 x 540 μm
²
and consumes 30 mW.