Broad-Band Dielectric Probes for On-Wafer Characterization of Terahertz Devices

Broad-band dielectric probes are introduced and demonstrated for on-wafer terahertz (THz) device characterization. Dielectrics that are low-loss in the THz region and selective metallization are used to realize the probe designs. The probes are measured and evaluated by themselves and are used to measure on-wafer THz devices. Simulations are done for the probes using ANSYS Electronics Desktop HFSS and measurements are taken using an Emcore frequency domain THz measurement system.