Three-Dimensional Simulation of Effects of Microstructure Evolution and Interfacial Delamination on Cu Protrusion in Copper Filled Through Silicon Vias by Combined Monte Carlo and Finite Element Methods

Size of Cu grains in the through silicon via (TSV) is relatively large compared with the diameter of the copper filler, then the effects of morphology and distribution of Cu grains on the thermo-mechanical behavior and Cu protrusion of TSV are becoming more and more obvious and thus can greatly affect the reliability of microelectronic components and devices, in particular for the 3D ICs with increasing integration density. In this study, the three-dimensional evolution of grains with different orientations in the copper filler of the Cu-filled TSV is simulated by using Monte Carlo method (MCM); and then the thermo-mechanical behavior and Cu protrusion of the TSV with taking into account the effects of the anisotropy of mechanical properties and grain distribution are investigated by finite element method (FEM); finally the cohesive zone model (CZM) is combined with the finite element model to reveal the dynamic delamination at the Cu/SiO
₂
interface and clarify the interaction effects between Cu protrusion and interfacial delamination, with focus on the influence of interfacial delamination on the thermo-mechanical behavior and protrusion of the Cu-filled TSV.