3D/multilayer heterogeneous integration and packaging for next generation applications in millimeter-wave and beyond

This paper presents the recent important developments in multilayer/3D multichip module and heterogeneous integration technologies, utilizing the advantages of a variety of semiconductor and advanced integration and packaging technologies, towards making the next-generation mmW and sub-mmW/THz wireless applications feasible and affordable. This includes advanced multilayer ceramic-based thick-film based technique which has realized high-performance and compact passive components to complete modules, achieving the highest performance in MCMs, using a cost-effective mounting and integration technique, yet covering frequencies from 1 to 200 GHz. Moreover, presents the recent advancements in 3D wafer-level heterogeneous integration technology (to 300 GHz), which combines compound-semiconductor (InP/GaN) with Si/CMOS for challenging mmW/sub-mmW applications.