A novel junction field plates AlGaN/GaN heterostructure field effect transistors with high breakdown voltage and Baliga's figure of merit for power electronics application

We conducted a numerical analysis on a novel P-GaN gate AlGaN/GaN HFET heterostructure field effect transistor with junction field plate (JFP-HFET) in our study. A fabrication process was proposed to realize the novel JFP-HFET. According to our simulation results, the BV of JFP-HFET can be significantly improved from 600 V to 1340 V, which is nearly 120% higher than that of conventional P-GaN gate HFET. The forward characteristics showed that J KP did not strongly affect the on state resistance R
_on
and the maximum drain current I
_dsmax
. By optimizing the length of P-AlGaN region of the JFP L
_p
to 5.8 μιη, the hole concentration of P-AlGaN N
_p
to 1×10
¹⁷
cm
³
and the thickness of the JFP T
_j
to 500 nm, the highest Baliga's figure of merit (BFOM) of 1.39 GW/cm
²
can be achieved.