Study on the improved short-circuit behavior of narrow mesa Si-IGBTs with emitter connected trenches

The impacts of the self-heating and autonomous hole supply adjustment on the short-circuit (SC) behavior of narrow mesa Si-IGBTs are investigated. As reported previously, non-saturated output characteristics of very narrow mesa IGBT, which is originatedfrom so-called CIBL effect, leads to larger current peak and lattice temperature rising during SC pulse. Newly introduced "GGEE" structure does not show non-saturated output curves thanks to autonomous hole supply adjustment by parasitic pMOS operation. 3D TCAD simulation shows MOS channel mobility degradation besides the parasitic pMOS plays an important role to establish the built-in negative feed-back loop against the thermally induced nearly instantaneous failure.