Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature

Threshold voltage and channel mobility of 1.2kV SiC MOSFET at high junction temperature up to 700°C have been extracted and analyzed for the first time, by virtue of a specially designed short-circuit measurement technique we developed. During the short-circuit operation, the junction temperature of the SiC MOSFET can rise significantly within a few microseconds, which can be extracted based on the short-circuit waveforms and electro-thermal calculations. The SiC MOSFET investigated in this work can maintain normally-off operation at a junction temperature up to 700°C. Furthermore, the underlying mechanisms of the temperature dependence of the threshold voltage and channel mobility are also discussed.