Fabrication and characterization of a sensitivity multi-annular backscattered electron detector for desktop SEM

A sensitivity silicon p-n diodes for detecting backscattering electrons in SEM was proposed and fabricated. The multi-annular configuration enables to provide higher sensitivity of Z-contrast and better surface topography contrast of BSE image. In this study, the multi-annular backscattered electron detector (BSED) can provide enhancement of surface topography contrast and image contrast with 105% and 42% as compared with commercial BSED which with the multi-fan configuration. We also designed a high sensitivity to low energy electrons detector which with lateral p-n junctions and Al metal grids.