A 90–120 GHz driver amplifier with 70nm InP PHEMT

This paper presents the design and simulation of a three-stage driver amplifier with a 70-nm InAlAs/InGaAs/InP pseudomorphic high electron-mobility transistor (PHEMT) technology. The three-stage driver amplifier is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25 μm gate length PHEMT. The high-low pass filter structures are used for matching network, edge-coupled lines are selected to block dc voltage, radial stubs are chosen as RF ground and shunt RC networks are included in the bias circuitry to maintain amplifier stability. Ground coplanar waveguide (GCPW) structure is added in input and output port. The three-stage driver amplifier provides more than 18dB linear gain between 90 and 120GHz, a P-1dB at the output of 7dBm, more than 10dBm saturated output power at 110GHz, consumes 58.9mW and the size is about 2.3×1.1 mm
²
.