A resonant gate driver circuit with turn-on and turn-off dv/dt control

At high speed operation of SiC MOSFETs, significant gate losses are present with conventional resistive gate driver circuits. Besides, excessive electromagnetic interference may be generated when they are hard-switched and hence dv/dt control is desired in certain applications. A modified resonant gate driver circuit with separate turn-on and turn-off resonant transfer path is proposed in order to have a decoupled passive dv/dt control of a MOSFET for both turn-on and turn-off process. Further it has been demonstrated using the proposed circuit that dv/dt can be effectively adjusted by proper selection of resonant inductance in each path.