A capacitive cross-coupled GaN HEMT injection-locked frequency divider

This letter studies a GaN HEMT divide-by-2 injection-locked frequency divider (ILFD) with the tail injection method. The proposed ILFD has been implemented with the WIN 0.25 μm GaN HEMT technology. The ILFD consists of a capacitive cross-coupled HEMT pair and an LC-tank. The free-running oscillation of the ILFD is around 4.9 GHz. At the ILFD-core supply 0.6 V, the locking range is 0.12 GHz from 9.51 GHz to 9.63 GHz, the output power from the ILFD core is 4.51 dBm. The die area of the push-push GaN HEMT oscillator is 2×1 mm
²