Multi-scale modelling of internal failure mechanism of SiC power MOSFETs

In recent years, silicon carbide (SiC) high-power devices have received widespread attention with the development of wide bandgap semiconductor. Using multi-scale modelling (finite element and molecular dynamics simulations), a considerable weakness breakdown region was revealed at P-base corner near JFET region under overvoltage condition due to electronic field gathered. Besides, a hot pot is observed in JFET region when SiC MOSFET is shorted in circuit. The molecular dynamics simulations suggest that high temperature makes electrode metal melted and gate oxide also becomes unreliable above the hot spot area.