3D hybrid bonding assembly studied by scanning thermal microscopy, resistive thermometry and Finite Element Modelling

Heat dissipation is one of the main challenges faced by microelectronics due to the increase of integration density. From Silicon-On-Insulator (SOI) to 3D-stacked technologies, accurate knowledge of the chip temperature is needed to quantify the thermal performances at the device and package levels. In this work, a 3D Hybrid Bonding assembly is studied by means of resistive thermometry and Scanning Thermal Microscopy (SThM), a technique based on atomic force microscopy where a self-heated electrical resistance is added at the probe apex in order to measure the surface temperature of test chips. The measurements are compared to numerical simulation of heat conduction with Finite Element Modeling, which require local homogenization inside the chip to reduce the computation time due to the large aspect ratios involved. The comparison is only possible once a numerical reproduction of the experiment has been done by means of a virtual scan. Reasonable agreement between the numerical temperature field and the experimental one is observed.