Study of EM & thermal design in 1.2kV/600A IGBT module

The investigation and development work on the electromagnetic (EM) and thermal design of a 1.2 kV/600A half-bridge insulated-gate bipolar transistor (IGBT) module will be presented in this paper. With the assistance of the 3D multi-physics simulation tool, the EM, electro-thermal and thermal network properties of the designed module are characterized. It is demonstrated that with proper configuration of the substrate layout, busbars design and materials choice, the 1.2kV/600A IGBT module packaging describes good electrical properties as well as relatively low parasitic inductance and thermal resistance. The thermal deformation of the baseplate under real temperature cycling condition is also studied into details.