Reliability comparison between Al process and Cu process based on 0.11um technology node

Reliability of both Front-end-of-line (FEOL) and Back-end-of-line (BEOL) was evaluated on 0.11um Al process and Cu process. Time dependence dielectric breakdown (TDDB) of Gate oxide integrity (GOI) and time-to-failure (TTF) of hot carrier injection (HCI) degraded for Cu process due to the effect of fluorinated silicate glass (FSG). TTF lognormal distribution of isothermal electromigration (IsoEM) of Cu metal lines showed better uniformity. Inter metal dielectric (IMD) voltage ramp (Vramp) of Al bottom metal displayed better TTF distribution caused by receiving more F ions from undoped silicate glass (USG) etch process.