Engineering resistive switching behavior in TAOx based memristive devices for non-von Neuman computing applications

Memristive devices are nowadays widely investigated for non-von Neuman computing, such as neuromorphic and in-memory computing, where memristors with incremental switching behavior are favorable for neuromorphic hardware while binary resistance state with high on/off ratio is desirable for the in-memory logic. Here we report the engineering of the resistive switching behavior in tantalum oxide based memristive devices by introducing an ion diffusion limiting layer Al
₂
O
₃
at the TiN/TaO
_x
interface in order to satisfy the different requirements of various applications. This study could provide clues to the optimization of memristive devices for future neuromorphic and logic applications.