Effects of Annealing and Substrate Temperature for Sn-S Thin Films

Sn and SnS thin films were deposited by thermal evaporation. The substrate temperature was from room temperature to 300 °C. After deposition, the thin films prepared at R.T. were annealed in a H2S atmosphere at temperature ranging from 100 to 500 °C for 1 hour. SnS thin films were obtained from SnS precursor films annealed below 150 °C. The XRD patterns of all the thin films deposited at substrate temperature ranging from 150 to 300 °C indicated such films were SnS single phase from. From cross-sectional SEM photographs, SnS precursor films deposited at 300 °C was found to be denser than that at room temperature.