Numerical Simulation of p-type front junction PERL Silicon cell for III-V lSi Tandem Devices

Extensive modelling work is required to guide the optimization of prototype epitaxial grown GaAs
_0.75
P
_0.25
/Si dual junction solar cell for achieving > 30% efficiency. In this work, Sentaurus TCAD is used to model p-type PERL silicon cell under GaAs
_0.75
P
_0.25
truncated one-sun AM1.5G spectrum. The PERL cell J
_sc
is found to be greatly dependent on GaP/Si Interface Recombination Velocity (IRV), while FF and V
_oc
remain largely unaffected. Moreover, further increase of minority carrier lifetime above 500μs in p-type silicon cell does not enhance its performance significantly, providing the base doping density is lower than 1E17cm
^-3
. Loss analysis shows that heavily-doped deep junction emitters should be avoided in order to get optimum bottom cell J
_sc
when GaP/Si IRV is low.