Laser Hydrogenation on Heavily Dislocated Cast-Mono Silicon Cells

Annealing processes both with and without the use of illumination have previously been shown to significantly improve the performance of cells made on highly dislocated castmono silicon material. This work further investigates this process, and finds that at temperatures <;300 °C, whether illuminated or not, significant changes occur in the first second of processing. However, there is still a clear dependence on the illumination intensity, with different trends appearing for cells processed in the dark, ~2 suns or ~33 suns, indicating the charge state of the hydrogen is likely still important. While the exact mechanisms are not yet understood, this work should provide further insight into the behavior of hydrogen and passivation in heavily dislocated silicon.