Simulation and Spectroscopy of Carrier Relaxation in GaSb and GaAs

Numerical simulation of carrier dynamics in GaAs and GaSb double heterostructures is used in combination with steady-state and time-resolved spectroscopy to extract quantitative material properties in order to predict the end performance of photovoltaic devices. We find that precise details of even simple double heterostructures, including barrier composition, surface recombination, substrate doping and lifetime must be taken into account in order to accurately extract this information.