Integration of Quantum Dots and Quantum Wells into InGaAs Metamorphic Subcell for Radiation Hard 3-J ELO IMM Photovoltaics

In this work, a Sentaurus TCAD model of inverted metamorphic triple junction solar cells is demonstrated along with experimental 3J current-voltage and external quantum efficiency measurements for the purpose of predicting end-oflife efficiency improvement from incorporating quantum wells or quantum dots into a metamorphic In
_0.3
Ga
_0.7
As subcell in a 3J solar cell. A radiation-hard “end-of-life optimized” design is presented and end-of life efficiency enhancement is predicted from calculated QD and QW absorption coefficients. The resulting QW enhanced solar cell design is predicted to have a 6% relative efficiency enhancement over the optimized baseline design.