Electrodeposition of Si-layer Through Reduction of Diatomaceous Earth for the Application of Solar-Cells

Silicon (Si) layer was formed on the silver (Ag) substrates using electrodeposition technique through electrochemical-reduction of the purified (99%) diatomaceous earth (SiO
₂
) at high temperature of 855o C using calcium chloride (CaCl
₂
) molten-salt. Electrodeposition was conducted using a three-electrode electrochemical -cell. Reduction of the SiO
₂
was possible with applying negative potential of more than 0.7 volt on the Ag-electrode with respect to graphite reference-electrode. Raman spectroscopy and X-ray diffraction method confirm formation of the Si-layer on the Ag-substrate from SiO
₂
using electrodeposition technique. Scanning electron microscopy indicates that deposited Si has morphology of rough surfaces.