Impact of hot carrier stress on small-signal parameters of FD-SOI NMOSFETs

The continuous evolution and physical scaling of RF CMOS devices empowers the high performance millimeter wave applications of modern technologies. The reliable operation of these devices is also becoming more and more important with the rapid scaling to achieve higher performance. To obtain in depth understanding of reliability of FD-SOI RF devices, the worst case hot carrier stress was induced and the corresponding impact on small signal parameters is analyzed using S-parameter and DC measurements. The physical origin of the variation and the link with DC parameter degradation is investigated.