A three-level, T-type, power electronics building block using Si-SiC hybrid switch for high-speed drives

This paper presents the design and implementation of a 100 kW three-level T-type (3L-T
²
), single-phase power electronics building block (PEBB). The PEBB features switching power devices with associated gate drivers, DC-link capacitors and interconnection busbar. A hybrid switch (HyS), which includes a Si IGBT and a SiC MOSFET in parallel, forms the switching power device in the PEBB. An low-inductive multi-layer laminated busbar was designed to have symmetrical current commutation loops. A major contribution is that this is achieved while no three-level T-type power module was used. A loop inductance of 29 nH was achieved which is lower than the existing state-of-the-art three-level designs in literature. The fabricated prototype PEBB achieves a specific power density of 27.7 kW/kg and a volumetric power density of 308.61 W/in
³
. Single-phase operation of the PEBB has been demonstrated at the switching frequency of 28 kHz.