Parasitic resistance modeling and optimization for 10nm-node FinFET

A TCAD-based study on the parasitic resistance (R
parasitics
) of 10nm FinFET is performed. A total parasitic resistance of 1490Q/Fin is extracted using calibrated physical models, and the components of the R
parasitics
are evaluated. It is observed that by introducing wraparound contact and highly doped source/drain, contact resistance (R
contact
) of 10nm FinFET is well minimized and current crowding in the fin is suppressed. It is also found that the resistance of the lightly doped spacer region (R
spacer
) constitutes more than 50% of total R
parasitics
and can be optimized by introducing highly doped segments. With the optimized doping profile in the spacer, drain current (Id) and intrinsic gain (Av) can be improved by 11% and 16%, respectively. In the case for 7nm-node FinFET, it was concluded that further R
contact
reduction is also needed to optimize its performance.