Ultra low power inductorless low noise amplifier: Comparison of FDSOI technologies

This paper exploits the benefits of the body biasing on the design of an Ultra Low Power (ULP) inductorless Low Noise Amplifier (LNA) working at 2.4GHz. A comparison of two Fully-Depleted Silicon-On-Insulator (FDSOI) technologies: STMicroelectronics 28 nm UTBB FDSOI Technology and Global Foundry 22 nm FDX® Technology is proposed. The results in terms of Gain (S21), Noise Figure (Nf), Input Matching (S11) and power consumption of the LNA for the two technologies are presented. The simulated results shows the advantages of using the body biasing to lower significantly the power consumption of an Integrated Circuit (IC) block.